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Atolyze™-MINI ALD System
原子层沉积系统
Product Description
MAIN FEATURES
MAIN FEATURES
● Designed for catalyst, battery electrode, and advanced powder surface modification studies.
● Supports up to eight solid/liquid precursors, two oxidizing/reducing gas lines, and three carrier gas lines for complex process requirements.
● Robotic integration for automated sample loading/unloading and cross-system transfer, enabling unattended operation.
● Precise temperature control (±1 °C) with fuzzy logic self-tuning for high process reproducibility and film quality.
● Fully automated control system with user-defined programming for flexible ALD process development.
● Automatic control system, programmable process control to achieve automatic sample growthThe control. ● Fully automated control system with user-defined programming for flexible ALD process development.
● Integrated safety interlock and alarm system for reliable and safe operation.
● Comprehensive process logging for full traceability of all operations.
● Designed for catalyst, battery electrode, and advanced powder surface modification studies.
● Supports up to eight solid/liquid precursors, two oxidizing/reducing gas lines, and three carrier gas lines for complex process requirements.
● Robotic integration for automated sample loading/unloading and cross-system transfer, enabling unattended operation.
● Precise temperature control (±1 °C) with fuzzy logic self-tuning for high process reproducibility and film quality.
● Fully automated control system with user-defined programming for flexible ALD process development.
● Integrated safety interlock and alarm system for reliable and safe operation.
● Comprehensive process logging for full traceability of all operations.
ALD TEST DATA
ALD TEST DATA
TECHNICAL DATA
TECHNICAL DATA
| Main Chamber | Material | 316SS | |
| Operating Temperature | RT~400℃ | ||
| Substrate | Powder, milligram scale | ||
| Temperature control accuracy | ±1℃ | ||
| Precursors Delivery | 4 Low temperature precursors (RT~100℃) | (CH3)3Al, (CH3)3Ge, H2O etc. | |
| 4 High temperature precursors (RT~300℃) | Fe(Cp)2, Precious metal precursors | ||
| Temperature control accuracy | ±1℃ | ||
| Gas Flow Control | 5 Gas flow controllers, 0-500 sccm | ||
| Carrier Gas | N2, Ar | ||
| Reaction Gas | O2/O3，H2 | ||
| Temperature Control Channels | Up to 48 channels (±1 °C) | ||
| Valve Control Channels | Up to 24 channels (control accuracy: 15 ms) | ||
| Control System | Main processing unit, heating control unit, temperature control unit | ||
| Software Control | LabVIEW graphical design, PID temperature control with fuzzy algorithm auto tuning function, Programmable and Vacuum interlock function |
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| Options | Residual gas analysis module | ||
| Plasma module | |||
| QCM for in-situ gas composition analysis | |||
| Ellipsometer optical detection module | |||
| FTIR spectrum in-situ detection module | |||
Related Documents / DOWNLOAD
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ACME (Beijing) Technology
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Company Address:
No. Jia 25, Yanqi South 4th Street, Yanqi Economic Development Area, Huairou District, Beijing 101407, China
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