Desktop ALD Systems
原子层沉积系统
Product Description
MAIN FEATURES
MAIN FEATURES
● Compact design with minimal footprint for flexible integration into various laboratory environments.
● Atomic-scale film growth with ångström-level thickness control.
● Excellent conformality for complex structures and powder surface modification.
● Supports deposition of various oxides and composite thin films.
● Mature process packages for rapid deployment and reliable reproducibility.
● Compatible with 4-inch wafers and micro/nano powder samples.
● Compact design with minimal footprint for flexible integration into various laboratory environments.
● Atomic-scale film growth with ångström-level thickness control.
● Excellent conformality for complex structures and powder surface modification.
● Supports deposition of various oxides and composite thin films.
● Mature process packages for rapid deployment and reliable reproducibility.
● Compatible with 4-inch wafers and micro/nano powder samples.
ALD TEST DATA
ALD TEST DATA
TECHNICAL DATA
TECHNICAL DATA
| Chamber Material | 316SS | |||
| Operating Temperature | RT~350℃ | |||
| Substrate | Up to 4-inch wafer (customizable to 6-inch) | |||
| Temperature control accuracy | ±1℃ | |||
| 2 Low temperature precursors (RT~100℃) | TMA, H2O etc | |||
| 2 High temperature precursors (RT~100℃) | Hf (NMe2)4, Zr(NMe2)4 etc | |||
| Temperature control accuracy | ±1℃ | |||
| Gas Flow Control | 3 Gas flow controllers, 0-500 sccm | |||
| Carrier Gas | N2, Ar | |||
| Reaction Gas | O2/O3，H2 | |||
| Film Uniformity | ≤1% (Al₂ O₃ , 5-point average, edge exclusion: 5 mm) | |||
| Software Control | LabVIEW graphical design, PID temperature control with fuzzy algorithm auto tuning function, Programmable and Vacuum interlock function |
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| Options | QCM for in-situ gas composition analysis | |||
| Ozone generator | ||||
| Glovebox | ||||
Related Documents / DOWNLOAD
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ACME (Beijing) Technology
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