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ALD SYSTEM
原子层沉积系统

Product Description

  MAIN FEATURES

 

  MAIN FEATURES

 

● Samples: Powder, flag sample, others available upon request

● Optional interconnection with XPS, STM and other ultra-high vacuum system

● Process Chamber, heating up to 400℃, temperature control accuracy ±1℃

● Up to eight different precursors, two oxidation/reduction lines, and three carrier gas lines

● High-temperature bubbler design for solid metal precursors with low vapor pressure, ideal for improving reaction efficiency and experimental repeatability

● Automatic control system, programmable process control to achieve automatic sample growthThe control ● system has a safety interlock alarm function

● PID control algorithm with auto tuning function

● All metal sealing, ideal for corrosive reaction process

● Real time gas flow and vacuum monitoring

● On-line residual gas analysis module 

● Including zone generator and thermal decomposition device for reaction residuals

● Samples: Powder, flag sample, others available upon request

● Optional interconnection with XPS, STM and other ultra-high vacuum system

● Process Chamber, heating up to 400℃, temperature control accuracy ±1℃

● Up to eight different precursors, two oxidation/reduction lines, and three carrier gas lines

● High-temperature bubbler design for solid metal precursors with low vapor pressure, ideal for improving reaction efficiency and experimental repeatability

● Automatic control system, programmable process control to achieve automatic sample growthThe control ● system has a safety interlock alarm function

● PID control algorithm with auto tuning function

● All metal sealing, ideal for corrosive reaction process

● Real time gas flow and vacuum monitoring

● On-line residual gas analysis module 

● Including zone generator and thermal decomposition device for reaction residuals

  ALD TEST DATA

 

  ALD TEST DATA

 
 
 

  TECHNICAL DATA

 

  TECHNICAL DATA

 

 

Main Chamber Size ID 40mm × L 980mm
  or custom upon request
Material 316SS
Heating Temperature RT~400℃
Temperature control accuracy ±1℃
Precursors Delivery 4 Low temperature precursors (RT~80℃) (CH3)3Al, (CH3)3Ge, H2O etc.
4 High temperature precursors (RT~300℃) Fe(Cp)2,
Precious metal precursors
Temperature control accuracy ±1℃
Gas Flow Control 5 Gas flow controllers, 0-500 sccm
Carrier Gas N2, Ar
Reaction Gas O2/O3,H2
No. of Temperature Control 48(Max), Temperature control accuracy ±1℃
No. of Valve Control 24(Max), Control accuracy 15ms
Control System Main processing unit, heating control unit, temperature control unit
Software Control LabVIEW graphical design, PID temperature control with fuzzy algorithm auto tuning function, 
Programmable and Vacuum interlock function
Options Residual gas analysis module  
Plasma module
QCM for in-situ gas composition analysis
Ellipsometer optical detection module
FTIR spectrum in-situ detection module

 

Related Documents / DOWNLOAD

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