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ALD SYSTEM
原子层沉积系统
Product Description
MAIN FEATURES
MAIN FEATURES
● Samples: Powder, flag sample, others available upon request
● Optional interconnection with XPS, STM and other ultra-high vacuum system
● Process Chamber, heating up to 400℃, temperature control accuracy ±1℃
● Up to eight different precursors, two oxidation/reduction lines, and three carrier gas lines
● High-temperature bubbler design for solid metal precursors with low vapor pressure, ideal for improving reaction efficiency and experimental repeatability
● Automatic control system, programmable process control to achieve automatic sample growthThe control ● system has a safety interlock alarm function
● PID control algorithm with auto tuning function
● All metal sealing, ideal for corrosive reaction process
● Real time gas flow and vacuum monitoring
● On-line residual gas analysis module
● Including zone generator and thermal decomposition device for reaction residuals
● Samples: Powder, flag sample, others available upon request
● Optional interconnection with XPS, STM and other ultra-high vacuum system
● Process Chamber, heating up to 400℃, temperature control accuracy ±1℃
● Up to eight different precursors, two oxidation/reduction lines, and three carrier gas lines
● High-temperature bubbler design for solid metal precursors with low vapor pressure, ideal for improving reaction efficiency and experimental repeatability
● Automatic control system, programmable process control to achieve automatic sample growthThe control ● system has a safety interlock alarm function
● PID control algorithm with auto tuning function
● All metal sealing, ideal for corrosive reaction process
● Real time gas flow and vacuum monitoring
● On-line residual gas analysis module
● Including zone generator and thermal decomposition device for reaction residuals
ALD TEST DATA
ALD TEST DATA
TECHNICAL DATA
TECHNICAL DATA
| Main Chamber | Size | ID 40mm × L 980mm or custom upon request |
| Material | 316SS | |
| Heating Temperature | RT~400℃ | |
| Temperature control accuracy | ±1℃ | |
| Precursors Delivery | 4 Low temperature precursors (RT~80℃) | (CH3)3Al, (CH3)3Ge, H2O etc. |
| 4 High temperature precursors (RT~300℃) | Fe(Cp)2, Precious metal precursors |
|
| Temperature control accuracy | ±1℃ | |
| Gas Flow Control | 5 Gas flow controllers, 0-500 sccm | |
| Carrier Gas | N2, Ar | |
| Reaction Gas | O2/O3，H2 | |
| No. of Temperature Control | 48(Max), Temperature control accuracy ±1℃ | |
| No. of Valve Control | 24(Max), Control accuracy 15ms | |
| Control System | Main processing unit, heating control unit, temperature control unit | |
| Software Control | LabVIEW graphical design, PID temperature control with fuzzy algorithm auto tuning function, Programmable and Vacuum interlock function |
|
| Options | Residual gas analysis module | |
| Plasma module | ||
| QCM for in-situ gas composition analysis | ||
| Ellipsometer optical detection module | ||
| FTIR spectrum in-situ detection module | ||
Related Documents / DOWNLOAD
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1st to 2nd Floor, Building 7, No. 11 Xingke East Street, Yanqi Economic Development Area, Huairou District, Beijing 101407, China
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