Molecular Beam Epitaxy System

分子束外延系统

Product Description

MAIN FEATURES

● Compatible with substrates up to 4 inches.
● Equipped with 10 source ports (customizable upon request).
● Fast sample loading and transfer; supports parking of up to 5 samples (customizable) .
● Compatible with various in-situ growth characterization and monitoring systems or instruments, including SPM, RHEED, QCM, and BFM.
● Fully automated growth system with control over vacuum pumps, gate valves, programmable growth processes, and real-time system monitoring. Operated via a 19-inch touchscreen control panel.
● Integrated water, electricity, and gas module for easy maintenance.

TECHNICAL DATA

Growth Chamber	Substrate Compatibility	Up to 4-inch wafers
	Chamber Diameter	550 mm
	Material	316L
	Ultimate Vacuum	better than 3×10^-10mbar
	Manipulator	Four-axis stage, up to 1200°C
	Source ports	CF63×10 (customizable)
	Bakeout temperature	150℃
Preparation Chamber	Ultimate Vacuum	Better than 5×10^-10 mbar
	Manipulator	Up to 800℃（customizable）
	Source Ports	CF63×2（customizable）
Load lock Chamber	Ultimate Vacuum	Better than 4.5×10^-8 mbar
Load lock Chamber	Sample Parking Capacity	Up to 5 wafers (customizable)
Control System	Basic Functions	19-inch touchscreen control panel
		Real-time system monitoring
		Automated valve and pump control (one-click PUMP / VENT)
		Vacuum and transfer interlocks with integrated UPS backup
		Automated bakeout process
		Continuous data logging
		Recipe-based growth programming
		Alarm protection with system emergency stop button
		Automated manipulator control
	Optional functions	Custom growth recipes

Related Documents / DOWNLOAD

EN-Molecular Beam Epitaxy System

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